نوع مقاله : مقاله مروری پژوهشی

نویسندگان

1 دانشکده فنی و مهندسی، گروه مهندسی مواد، دانشگاه بوعلی سینا همدان، همدان، ایران.

2 دانشکده فنی و مهندسی، گروه مهندسی مواد، دانشگاه بوعلی سینا همدان، همدان، ایران

3 دانشکده فنی و مهندسی، گروه مهندسی برق، دانشگاه بوعلی سینا همدان، همدان، ایران.

چکیده

اکسید روی (ZnO) به دلیل نیمه­ هادی بودن و دارا بودن شکاف انرژی پهن در صنایع مختلف از جمله نوری و الکترونیک مورد استفاده قرار می­گیرد. در این پژوهش نانوالیاف ZnO و آلایش شده با آلومینیوم (با نسبت­Al/Zn برابر شش درصد وزنی) با استفاده از فرایند الکتروریسی و در ادامه پس از کلسینه شدن در دماهای مختلف (250، 300 و 400 درجه سانتی­گراد) سنتز شدند. اثر آلایش بر ریزساختار، بلورشناسی، بنیان­ های مولکولی و رفتار فوتولومینسانس نانو­الیاف ZnO به ترتیب به کمک میکروسکوپ الکترونی روبشی (SEM)، آنالیز پراش پرتو ایکس (XRD)، طیف سنجی فروسرخ تبدیل فوریه (FTIR) و طیف سنج فوتولومینسانس (PL) بررسی شد. نتایج نشان داد که متوسط قطر نانو­الیاف ZnO حاوی Al از 131 به 468 نانومتر پس از کلسینه شدن افزایش یافت. آنالیز XRD نشان داد که ZnO با ساختار هگزاگونال وورتزیت در هر دو نمونه تهیه شد و هم ­چنین تایید کرد که اتم­های Al در ساختار ZnO آلایش شده­ اند. مقایسه طیف FTIR نمونه­ ها نشان داد که آلایش Al  باعث انتقال پیوند Zn-O به بسامد­های بیشتر و تشکیل پیوندهای قوی در شبکه ZnO شد. نتایج PL نشان داد که آلایش Al خواص نوری ZnO را بهبود بخشید، زیرا تشکیل عیوب ساختاری در اثر آلایش Al باعث ایجاد سطوح با انرژی کمتر برای نقل و انتقال الکترون از پهنه رسانش به پهنه ظرفیت می­شود.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Photoluminescence and IR Properties of Al doped ZnO Nanofibers

نویسندگان [English]

  • Soheila Osali 1
  • Hamid Esfahani 2
  • Hamid Reza Karami 3

1 Department of materials Engineering, Bu-Ali Sina University, Hamedan, Iran

2 Department of materials Engineering, Bu-Ali Sina University, Hamedan, Iran

3 Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran

چکیده [English]

Zinc oxide (ZnO) is used widely in electrical and optical applications due to its wide band gap and also semiconductor properties. In the present study ZnO and Al doped (Al/Zn ratio equals to 6 wt.%) nanofibers (NFs) were synthesized by electrospinning method and post calcination at different temperatures 250, 300 and 400 ˚C. The effect of dopant on  microstructure, crystallography, functional molecule groups, and photoluminescence behavior of ZnO NFs were studied by means of scanning electron microscopy (SEM), X-ray diffraction pattern (XRD), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence spectroscopy (PL), respectively. Results showed that the average diameter of ZnO NFs was increased from 131 to 468 nm after calcination. XRD analysis indicated that the hexagonal wurtzite ZnO was formed in both samples. Also it confirmed that the Al dopant was incorporated into ZnO NFs. Comparison of FTIR spectra showed that the Al doping caused to shift the Zn-O band to higher frequencies and also construct the stronger bonds inside the ZnO lattice. PL results also revealed that the Al doping enhanced the optical properties. It is because that the point defects issued by Al doping create lower energy levels for transferring the electrons from conduction band to valence band.

کلیدواژه‌ها [English]

  • Semiconductor
  • Zinc Oxide
  • Nanofiber
  • Doping
  • Electrospinning
  • Photoluminescence
  • FTIR
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