مواد و فناوری‌های پیشرفته

مواد و فناوری‌های پیشرفته

مقایسه خواص الکتریکی و اپتیکی لایه‌های نازک نانوساختاری TeO2 قبل و بعد از تابش گاما

نوع مقاله : مقاله کامل پژوهشی

نویسنده
توکل توحیدی
استادیار، پژوهشکده کاربرد پرتوها، پژوهشگاه علوم و فنون هسته‌ای، مجتمع پژوهشی شمال‌غرب کشور، بناب، آذربایجان شرقی، ایران
10.30501/jamt.2021.254430.1137
چکیده
دی‌اکسید تلوریم (TeO2)، یکی از نیمه‌رساناهای مهم است که دارای خاصیت صوتی-اپتیکی بالا و پایداری شیمیایی و مکانیکی خوبی بوده و در دو فاز بی‌شکل و بلوری، برای مطالعات پایه و انواع کاربردها در فناوری، از جمله استفاده در قطعات اپتیکی، آشکارسازهای تابش گاما و حسگرهای گازی مناسب است. در این پژوهش، پس از تهیه لایه‌های نازک TeO2، به روش لایه‌نشانی تبخیر حرارتی در خلأ، در سه ضخامت مختلف، تأثیر تابش پرتو گاما در محدوده‌ Gy 10-40 و بازپخت حرارتی بر خواص نمونه‌ها، مطالعه و بررسی شد. نتایج میکروسکپی الکترونی روبشی (SEM)، تشکیل لایه‌ای با سطح یکنواخت را نشان داد. تحلیل نتایج پراش پرتو ایکس (XRD) نشان داد که ساختار لایه نازک TeO2، قبل از بازپخت، به‌صورت بی‌شکل است، ولی بعد از بازپخت، در دمای 400 درجه سلسیوس، به‌صورت بلوری است. شدت جذب نوری، بعد از بازپخت و بعد از تابش گاما، افزایش، ولی شکاف انرژی کاهش یافت. جریان الکتریکی نمونه‌ها، با افزایش ضخامت لایه‌ها، دُز پرتو گاما و بعد از بازپخت، افزایش یافت.
کلیدواژه‌ها
دی‌اکسید تلوریم
لایه نازک
تابش گاما
خواص اپتیکی
خواص الکتریکی

موضوعات

عنوان مقاله English

Comparison of Optical and Electrical Properties of TeO2 Nanostructure Thin Films Before and After Gamma Radiation

نویسنده English

Tavakkol Tohidi
Assistant Professor, Radiation Application Research School, Nuclear Science and Technology Research Institute (NSTRI), Northwest Research Complex, Bonab, East Azerbaijan, Iran
چکیده English

Tellurium dioxide (TeO2) is an important semiconductor, which it has high acousto-optic figure of merit, chemical stability and mechanical durability and both in its crystalline and amorphous forms, making it suitable for theoretical studies and technological applications such as optical devices, γ-ray detectors, and gas sensors. In this work, the TeO2 thin film with three different thicknesses was prepared by vacuum thermal evaporation method. The effect of gamma irradiation in the range of 10-40 Gy and also the effect of thermal annealing on properties of TeO2 thin films were investigated. Scanning Electron Microscopy (SEM) results showed the formation of the film with smooth surface. X-Ray Diffraction (XRD) analysis were revealed that the as-deposited films were amorphous but after annealing at 400 °C, the crystalline phase of the samples occurred. The optical absorbance after annealing and gamma radiation was increased but the band gap  decreased. The electrical current of samples was increased with increasing of films thickness, gamma dose and also after annealing.
 

کلیدواژه‌ها English

TeO2
Thin Film
Gamma Irradiation
Optical Properties
Electrical Properties
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مواد و فناوری‌های پیشرفته
دوره 10، شماره 2
تابستان 1400
صفحه 71-82

  • تاریخ دریافت 14 آبان 1399
  • تاریخ بازنگری 11 دی 1399
  • تاریخ پذیرش 10 مهر 1400