نویسندگان

1 پژوهشگاه مواد و انرژی، پژوهشکده سرامیک، کرج، ایران

2 پژوهشگاه مواد و انرژی، پژوهشکده نیمه هادیها، کرج، ایران

چکیده

 در این پژوهش، اثر دمای سینتر بر ریزساختار بدنه های Ba0.5Sr0.5TiO3 و خواص الکتریکی لایه های نازک ایجاد شده به روش کندوپاش مورد بررسـی قرار گرفت. ترکیب سرامیکی Ba0.5Sr0.5TiO3 تک فاز و بدون ناخالصی با استفاده از روش حالت جامد سنتز شد. به منظور بهینه یابی دمای پخـت، ایـن ترکیـب در
محدوده دمای ºC 1200
 تا 1400 ºC سینتر شد. نتایج نشان داد که نمونه ی سینترشده در دمای 1250 ºC از %95 چگالی نسبی و میانگین انـدازه دانـه هـای 8 µm برخوردار می باشد که به منظور استفاده برای تارگت کندوپاش مناسب می باشد. گاف انرژی لایه ی نازک اعمال شده از تارگت ساخته شده تحت شـرایط بهینـه eV 3/4 و ثابت دی الکتریک آن در فرکانس 10 kHz برابر با 4400 به دست آمد که نشان دهنده ی خواص مطلوب لایه های نازک این ترکیب از تارگت سـاخته شـده ی آن برای کاربردهای خازنی می باشد. به منظور بررسی های ریزساختاری، فازی و خواص الکتریکی از آزمون های ،XRD میکروسکوپی نوری، اندازه گیـری چگـالی، UV-Vis و اندازه گیری ثابت دی الکتریک استفاده شد  

کلیدواژه‌ها

عنوان مقاله [English]

The Effect of Sintering Process on Electrical and Microstructural Properties of Barium-Strontium-Titanate Sputtering Target and its Thin Film

نویسندگان [English]

  • Mohammad Reza Derakhshandeh 1
  • Mohamad Javad Eshraghi 2

1 Materials and Energy Research Center, Department of Ceramic, Tehran, Iran

2 Materials and Energy Research Center, Department of Semiconductors, Tehran, Iran

چکیده [English]

 In this study the effect of sintering parameters on the microstructure and electrical properties of the barium
strontium titanate sputtering target is investigated. For optimizing the sintering temperature, BST compacts sintered at
various temperatures ranging from 1200 to 1400 ºC for 2 hours. The sintered Barium Strontium Titanate sputtering
target comprising with a high density, purity and a fine-grained microstructure has been also fabricated. Optimized
calcining and sintering condition was obtained by controlling sintering temperature and time to fabricate single phase,
high relative density sintered body. A relative density of up to 95% and mean grain size of 8 µm were reached at the
sintering temperature of 1250
C. The relative permittivity of thin films at 10 KHz was around 4400. Also the thin film
bandgap was around 3.2 eV. The densities of the sintered samples were measured using the Archimedes method.
Characteristics of the body were analyzed by X-ray diffraction (XRD), optical microscopy. Dielectric permittivity (ε
r)
were measured with an HP 4192A impedance analyzer and thin film bandgap was analyzed by UV-Vis method.
 

کلیدواژه‌ها [English]

  • Barium Strontium Titanate
  • Sputtering target
  • Sintering
  • Solidstate synthesis
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