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طراحی و شبیه‌سازی دیود اثرمیدانی با تحرک الکترونی بالا مبتنی بر AlGaN/GaN

نوع مقاله : مقاله کامل پژوهشی

نویسندگان

1 دانشجوی دکتری، دانشکده مهندسی برق، دانشگاه صنعتی خواجه نصیرالدین طوسی، تهران، تهران، ایران

2 دانشیار، دانشکده مهندسی برق، دانشگاه صنعتی خواجه نصیرالدین طوسی، تهران، تهران، ایران

3 کارشناسی، دانشکده مهندسی برق، دانشگاه صنعتی خواجه نصیرالدین طوسی، تهران، تهران، ایران

چکیده

طراحان سیستم روی تراشه‌های جدید سعی در گنجاندن ملزومات بیشتری در طراحی بلوک‌های ساختاری دارند تا مدارهای مجتمع دیجیتالی قابل اطمینان با چگالی بالا، سرعت کلیدزنی بالا و توان مصرفی پائین ارائه دهند. در این مقاله، افزاره جدیدی به‌نام دیود اثر میدانی با تحرک الکترونی بالا (HEMFED) بر پایه AlGaN/GaN با موفقیت طراحی شده است. به منظور جلوگیری از نشت لایه بافر GaN و کاهش تأثیر مخرب تله‌های این لایه بر روی رفتار انتقالی گاز الکترون دو بعدی (2-DEG)، یک لایه جداساز AlN در ساختار ناهمگون به کار رفته است. ساختار پیشنهادی، نسبت جریان روشن به خاموش (ION/IOFF) را تا 107×88/4 برابر نسبت به همتای ترانزیستور با تحرک الکترونی بالا (HEMT) بر پایه AlGaN/GaN، 108×20/8 برابر نسبت به همتای ترانزیستور اثر میدانی فلز-اکسید-نیمه‌هادی (MOSFET)، و 104×05/9 برابر نسبت به همتای دیود اثر میدانی (FED) بر پایه Si در ولتاژ تغذیه V 8/1 بهبود می‌دهد. این برتری ناشی از برقراری یک میدان الکتریکی قوی به میزان kV/cm 800 در ناحیه 2-DEG ساختار ناهمگون پیشنهادی وتسریع حرکت حامل‌های الکترون صفحه‌ای در کانال می‌باشد. از این‌رو، این افزاره در کاربردهای دیجیتالی سرعت بالا و توان مصرفی پایین قابلیت استفاده دارد.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Design and Simulation of AlGaN/GaN High Electron Mobility Field-Effect Diode

نویسندگان [English]

  • Tara Ghafouri 1
  • Negin Manavizadeh 2
  • Matineh Hosseini 3

1 Ph. D. Student, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran

2 Associate Professor, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran

3 B. Sc., Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran

چکیده [English]

Modern system-on-chip (SoC) designers are trying to include more considerations in designing building blocks to present reliable integrated digital circuits as well as high-density, high-speed, and low-power ones. In this paper, an innovative device so-called High Electron Mobility Field-Effect Diode (HEMFED) is successfully designed based on AlGaN/GaN. To prohibit leakage of GaN buffer layer and weaken the impact of the buffer traps on electrical transport properties of two-dimensional electron gas (2-DEG), AlN spacer layer is embedded in the heterostructure. The proposed structure enhances ION/IOFF ratio up to 4.88×107 times compared to the AlGaN/GaN High Electron Mobility Field-Effect Transistor (HEMT) counterpart, 8.20×108 times compared to the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) counterpart, and 9.05×104 times compared to the Si Field-Effect Diode (FED) counterpart, at a supply voltage of VDD=1.8 V. This superiority of the proposed device is referred to the formation of a strong electric field of 800 kV/cm in 2-DEEG and the precipitation of electron sheet carriers in the channel. Accordingly, the proposed device can be utilized in high-speed and low-power digital applications.

کلیدواژه‌ها [English]

  • High Electron Mobility Field-Effect Diode (HEMFED)
  • ION/IOFF ratio
  • Heterojunction
  • Buffer layer
  • leakage
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مواد و فناوری‌های پیشرفته
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  • تاریخ دریافت: 07 مهر 1399
  • تاریخ بازنگری: 30 آبان 1399
  • تاریخ پذیرش: 31 شهریور 1400
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