نوع مقاله : مقاله کامل پژوهشی

نویسنده

استادیار، پژوهشکده کاربرد پرتوها، پژوهشگاه علوم و فنون هسته‌ای، مجتمع پژوهشی شمال‌غرب کشور، بناب، آذربایجان شرقی، ایران

چکیده

دی‌اکسید تلوریم (TeO2)، یکی از نیمه‌رساناهای مهم است که دارای خاصیت صوتی-اپتیکی بالا و پایداری شیمیایی و مکانیکی خوبی بوده و در دو فاز بی‌شکل و بلوری، برای مطالعات پایه و انواع کاربردها در فناوری، از جمله استفاده در قطعات اپتیکی، آشکارسازهای تابش گاما و حسگرهای گازی مناسب است. در این پژوهش، پس از تهیه لایه‌های نازک TeO2، به روش لایه‌نشانی تبخیر حرارتی در خلأ، در سه ضخامت مختلف، تأثیر تابش پرتو گاما در محدوده‌ Gy 10-40 و بازپخت حرارتی بر خواص نمونه‌ها، مطالعه و بررسی شد. نتایج میکروسکپی الکترونی روبشی (SEM)، تشکیل لایه‌ای با سطح یکنواخت را نشان داد. تحلیل نتایج پراش پرتو ایکس (XRD) نشان داد که ساختار لایه نازک TeO2، قبل از بازپخت، به‌صورت بی‌شکل است، ولی بعد از بازپخت، در دمای 400 درجه سلسیوس، به‌صورت بلوری است. شدت جذب نوری، بعد از بازپخت و بعد از تابش گاما، افزایش، ولی شکاف انرژی کاهش یافت. جریان الکتریکی نمونه‌ها، با افزایش ضخامت لایه‌ها، دُز پرتو گاما و بعد از بازپخت، افزایش یافت.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Comparison of Optical and Electrical Properties of TeO2 Nanostructure Thin Films Before and After Gamma Radiation

نویسنده [English]

  • Tavakkol Tohidi

Assistant Professor, Radiation Application Research School, Nuclear Science and Technology Research Institute (NSTRI), Northwest Research Complex, Bonab, East Azerbaijan, Iran

چکیده [English]

Tellurium dioxide (TeO2) is an important semiconductor, which it has high acousto-optic figure of merit, chemical stability and mechanical durability and both in its crystalline and amorphous forms, making it suitable for theoretical studies and technological applications such as optical devices, γ-ray detectors, and gas sensors. In this work, the TeO2 thin film with three different thicknesses was prepared by vacuum thermal evaporation method. The effect of gamma irradiation in the range of 10-40 Gy and also the effect of thermal annealing on properties of TeO2 thin films were investigated. Scanning Electron Microscopy (SEM) results showed the formation of the film with smooth surface. X-Ray Diffraction (XRD) analysis were revealed that the as-deposited films were amorphous but after annealing at 400 °C, the crystalline phase of the samples occurred. The optical absorbance after annealing and gamma radiation was increased but the band gap  decreased. The electrical current of samples was increased with increasing of films thickness, gamma dose and also after annealing.
 

کلیدواژه‌ها [English]

  • TeO2
  • Thin film
  • Gamma irradiation
  • Optical properties
  • Electrical Properties
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