Document Type : Original Reaearch Article
Authors
1 Ph. D. Student, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
2 Associate Professor, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
3 B. Sc., Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
Abstract
Modern system-on-chip (SoC) designers are trying to include more considerations in designing building blocks to present reliable integrated digital circuits as well as high-density, high-speed, and low-power ones. In this paper, an innovative device so-called High Electron Mobility Field-Effect Diode (HEMFED) is successfully designed based on AlGaN/GaN. To prohibit leakage of GaN buffer layer and weaken the impact of the buffer traps on electrical transport properties of two-dimensional electron gas (2-DEG), AlN spacer layer is embedded in the heterostructure. The proposed structure enhances ION/IOFF ratio up to 4.88×107 times compared to the AlGaN/GaN High Electron Mobility Field-Effect Transistor (HEMT) counterpart, 8.20×108 times compared to the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) counterpart, and 9.05×104 times compared to the Si Field-Effect Diode (FED) counterpart, at a supply voltage of VDD=1.8 V. This superiority of the proposed device is referred to the formation of a strong electric field of 800 kV/cm in 2-DEEG and the precipitation of electron sheet carriers in the channel. Accordingly, the proposed device can be utilized in high-speed and low-power digital applications.
Keywords
- High Electron Mobility Field-Effect Diode (HEMFED)
- ION/IOFF ratio
- Heterojunction
- Buffer layer
- leakage
Main Subjects
- Mukhopadhyay, S., Kalita, S., "Review on the designs and characteristics of high-electron mobility transistors", International Journal of Microwave Engineering and Technology, Vol. 4, No. 1, (2018), 20-41. https://doi.org/10.37628/ijmet.v4i1.765
- Zeng, F., An, J. X., Zhou, G., Li, W., Wang, H., Duan, T., Jiang, L., Yu, H., "A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability", Electronics, Vol. 7, No. 12, (2018), 377. https://doi.org/10.3390/electronics7120377
- Chen, W., Wong, K. Y., Huang, W., Chen, K. J., "High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors", Applied Physics Leters, Vol. 92, (2008), 253501. https://doi.org/10.1063/1.2951615
- Lee, G. Y., Liu, H. H., Chyi, J. I., "High-performance AlGaN/GaN schottky diodes with an AlGaN/AlN buffer layer", IEEE Electron Device Letters, Vol. 32, No. 11, (2011), 1519-1521. https://doi.org/10.1109/LED.2011.2164610
- Yoshida, S., Li, J., Ikeda, N., Hataya, K., "AlGaN/GaN field effect Schottky barrier diode (FESBD)", Physica Status Solidi (c), Vol. 2, No. 7, (2005), 2602-2606. https://doi.org/10.1002/pssc.200461300
- Narang, K., Bag, R. K., Singh, V. K., Pandey, A., Saini, S. K., Khan, R., Arora, A., Padmavati, M. V. G., Tyagi, R., Singh, R., "Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT", Journal of Alloys and Compounds, Vol. 815, (2020), 152283. https://doi.org/10.1016/j.jallcom.2019.152283
- Ghafouri, T., Salehi, A., Mahmoodnia, H., "Investigating a novel normally-ON AlGaN/GaN capped PHEMT and the effects of cap layers thickness on its gate leakage current", Proceedings of 26th Iranian Conference on Electrical Engineering (ICEE), Mashhad, Iran, 8-10 May 2018, (2018), 305-310. https://doi.org/10.1109/ICEE.2018.8472634
- Lee, I., Kim, J. N., Kang, W. T., Shin, Y. S., Lee, B. H., Yu, W. J., "Schottky barrier variable graphene/multilayer-MoS2 heterojunction transistor used to overcome short channel effects", ACS Applied Matererials and Interfaces, 12, No. 2, (2020), 2854-2861. https://doi.org/10.1021/acsami.9b18577
- Banerjee, P., Sarkar, S. K., "3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects", Journal of Computational Electronics, Vol. 16, (2017), 631-639. https://doi.org/10.1007/s10825-017-1002-y
- Dash, D. K., Saha, P., Sarkar, S. K., "3-D analytical modeling of triple metal tri-gate graded channel high-k SON TFET for improved performance", Silicon, Vol. 12, (2020), 2041-2052. https://doi.org/10.1007/s12633-019-00268-5
- Vimala, P., Samuel, T. S. A., "Investigation of cylindrical channel gate all around InGaAs/InP heterojunction heterodielectric tunnel FETs", Silicon, (2020). https://doi.org/10.1007/s12633-020-00691-z
- Masoudi, A., Ahangari, Z., Fathipour, M., "Performance optimization of a nanoscale GaSb p-channel electron-hole bilayer tunnel field effect transistor using metal gate workfunction engineering", Materials Research Express, Vol. 6, No. 9, (2019), 096311. https://doi.org/10.1088/2053-1591/ab30b0
- Abdi, D. B., Kumar, M. J., "In-built n+ pocket p-n-p-n tunnel field-effect transistor", IEEE Electron Device Letters, Vol. 35, No. 12, (2014), 1170-1172. https://doi.org/10.1109/LED.2014.2362926
- M., Nakajima, M., Jin. Q., Kimoto, T., "Experimental study on short-channel effects in double-gate silicon carbide JFETs", IEEE Transactions on Electron Devices, Vol. 67, No. 10, (2020), 4538-4540. https://doi.org/10.1109/TED.2020.3017143
- Singh, A., Chaudhury, S., Pandey, C. K., Sharma, S. M., Sarkar, C. K., "Design and analysis of high k silicon nanotube tunnel FET device", IET Circuits, Devices and Systems, Vol. 13, No. 8, (2019), 1305-1310. https://doi.org/10.1049/iet-cds.2019.0230
- Moalaghi, M., Koohisaadi, A., Talebnia, P., Manavizadeh, N., Lemraski, M. S., "Improving electronic parameters of silicon nanowires by arsenic and phosphor dopants", Jouurnal of Advanced Materials and Technologies (JAMT), Vol. 4, No. 4, (2015), 11-17. https://doi.org/10.30501/JAMT.2636.70311
- Gaulke, M., Janissek, A., Peyyety, N. A., Alamgir, I., Riaz, A., Dehm, S., Li, H., Lemmer, U., Flavel, B. S., Kappes, M. M., Hennrich, F., Wei, L., Chen, Y., Pyatkov, F., Krupke, R., "Low-temperature electroluminescence excitation mapping of excitons and trions in short-channel monochiral carbon nanotube devices", ACS Nano, Vol. 14, No. 3, (2020), 2709-2717. https://doi.org/10.1021/acsnano.9b07207
- Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Sultan, S. M., Lim, C. S., Tan, M. L. P., "Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths", Superlattices and Microstructures, Vol. 143, (2020), 106548. https://doi.org/10.1016/j.spmi.2020.106548
- Dabir, F., Sarraf-Mamoory, R., Riahi-Noori, N., Loeblein, M., Teo, E. H. T., "Synthesis and electrical properties evaluation of three-dimensional graphene", Jouurnal of Advanced Materials and Technologies (JAMT), Vol. 4, No. 3, (2015), 17-23. https://doi.org/10.30501/JAMT.2637.70303
- He, Y., Huang, Z., Zhang, M., Wu, M., Mi, M., Wang, C., Yang, L., Zhang. C., Guo, L., Ma, X., Hao, Y., "Temperature‐dependent characteristics of AlGaN/GaN nanowire channel high electron mobility transistors", Applications and Materials Science, Vol. 216, No. 16, (2019), 1900396. https://doi.org/10.1002/pssa.201900396
- Purwaningsih, S. Y., Zainuri, M., Triwikantoro, T., Pratapa, S., Darminto, D., "Structural, optical and defect state analyses of ZnO nanoparticle films", International Journal of Engineering, Vol. 33, No. 5, (2020), 852-860. https://doi.org/10.5829/ije.2020.33.05b.17
- Raissi, F., "A brief analysis of the field effect diode and breakdown transistor", IEEE Transactions on Electron Devices, Vol. 43, No. 2, (1996), 362-365. https://doi.org/10.1109/16.481742
- Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., Selberherr, S., "Performance assessment of nanoscale field-effect diodes", IEEE Transactions on Electron Devices, Vol. 58, No. 8, (2011), 2378-2384. https://doi.org/10.1109/TED.2011.2152844
- Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., "Geometrical study of nanoscale field effect diodes", Semicondoctor Science and Technology, Vol. 27, No. 4, (2012), 045011. https://doi.org/10.1088/0268-1242/27/4/045011
- Touchaee, B. J., Manavizadeh, N., "An inverter gate design based on nanoscale S-FED as a function of reservoir thickness", IEEE Transactions on Electron Devices, Vol. 62, No. 10, (2015), 3147-3152. https://doi.org/10.1109/TED.2015.2463099
- Salman, A. A., Beebe, S. G., Emam, M., Pelella, M. M., Ioannou, D. E., "Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies", Proceedings of International Electron Devices Meeting, San Francisco, CA, USA, 11-13 December 2006, (2006), 1-4. https://doi.org/10.1109/IEDM.2006.346971
- Touchaee, B. J., Manavizadeh, N., "Design and simulation of low-power logic gates based on nanoscale side-contacted FED", IEEE Transactions on Electron Devices, Vol. 64, No. 1, (2017), 306-311. https://doi.org/10.1109/TED.2016.2626342
- Ghafouri, T., Manavizadeh, N., "Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED", Ain Shams Engineering Journal, 12, No. 1, (2021), 709-716. https://doi.org/10.1016/j.asej.2020.05.005
- Badwan, A. Z., Chbili, Z., Li, Q., Ioannou, D. E., "SOI FED-SRAM cell: Structure and operation", IEEE Transactions on Electron Devices, Vol. 62, No. 9, (2015), 2865-2870. https://doi.org/10.1109/TED.2015.2450693
- Ghafouri, T., Manavizadeh, N., "Noise-immune 6T SRAM bit-cells based on side-contacted FED", IEEE Transactions on Electron Devices, Vol. 67, No. 12, (2020), 5511-5519. https://doi.org/10.1109/TED.2020.3028342
- Ghafouri, T., Manavizadeh, N., "Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS", Alexandria Engineering Journal, Vol. 59, No. 5, (2020), 3715-3729. https://doi.org/10.1016/j.aej.2020.06.026
- Badwan, A. Z., Chbili, Z., Yang, Y., Salman, A. A., Li, Q., Ioannou, D. E., "SOI Field-Effect Diode DRAM cell: Design and operation", IEEE Electron Device Letters, Vol. 34, No. 8, (2013), 1002-1004. https://doi.org/10.1109/LED.2013.2265552
- Alim, M. A., Jahan, I., Nipu, N. J., Naher, S., Rezazadeh, A. A., "Local mismatch and noise investigation for pre and post multilayer pHEMTs", Current Applied Physics, Vol. 20, No. 12, (2020), 1314-1320. https://doi.org/10.1016/j.cap.2020.09.006
- Table PIDS2a High-Performance (HP) Logic Technology Recruitment, Process Integration, Devices, and Structures (PIDS), (2018). http://www.itrs.net/
- ATLAS user’s manual device simulation software, Santa Clara, CA, USA, Silvaco, (2018). https://dynamic.silvaco.com
- Datta, S., Quantum transport: Atom to transistor, First edition, Cambridge University Press, (2005). https://cds.cern.ch
- Mita, J., Toda, F., Marui, T., Method for fabricating AIGaN/GaN-HEMT using selective regrowth, U.S. patent, US 20080176366 A1, (2008). https://patents.google.com/patent/US20080176366A1 (Accessed: 24 July 2008).
- Saha, J. K., Chakma, N., Hasan, M., "Impact of scaling channel length on the performances of nanoscale FETs", Proceedings of 9th International Conference on Electrical and Computer Engineering, Dhaka, Bangladesh, 20-22 December 2016, (2016), 123-126. https://doi.org/10.1109/ICECE.2016.7853871
- Kim, T. K., Kim, D. H., Yoon, Y. G., Moon, J. M., Hwang, B. W., Moon, D. I., Lee, G. S., Lee, D. W., Yoo, D. E., Hwang, H. C., Kim, J. S., Choi, Y. K., Cho, B. J., Lee, S. H., "First demonstration of junctionless accumulation-mode bulk FinFETs with robust junction isolation", IEEE Electron Device Letters, Vol. 34, No. 12, (2013), 1479-1481. https://doi.org/10.1109/LED.2013.2283291
- Kordrostami, Z., Sheikhi, M. H., Zarifkar, A., "Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs", IEEE Transactions on Nanotechnology, Vol. 11, No. 3, (2012), 526-533. https://doi.org/10.1109/TNANO.2011.2181998