Abstract
A method for bulk growth of mono- to few-layer graphene on Nickel substrate by chemical vapor deposition of methane at atmospheric pressure is described. Optical microscopy, scanning and transmission electron microscopy and XRD measurements reveal the high quality of the obtained graphene. After the growth of graphene, the nickel particles can be effectively removed by a modest treatment without degradation of the quality of producing high yield and high purity graphenes with no carbon impurities such as carbon nanotubes.
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