The Study of Tl2O3َ Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

Maleki Shahraki, Mohammad; Delshad Chermahini, Mehdi; Abdollahi, Mehdi

doi:10.30501/jamt.2020.104197

Document Type : Original Reaearch Article

Authors

¹ Department of materials science & engineering, University of Maragheh, Maragheh, Iran.

² Department of materials science & engineering, University of Shahrekord, Shahrekord, Iran.

³ Department of materials science & engineering, University of Shahrekord, Shahrekord, Iran

https://doi.org/10.30501/jamt.2020.104197

Abstract

In this research, the effects of various molar amounts of Tl2O3 addition (x= 0, 0.1, 0.25, 0.5, and 1.0) on microstructure and electrical properties of high-voltage SnO2 varistors were investigated. According to XRD and FE-SEM results, the presence of Tl2O3 was detected as secondary phase in samples which their x values are higher than 0.25. By Tl2O3 addition from 0 to 1%, the grain size decreased from 4 µm to 2.3 µm which it is resulted from a grain growth suppression induced by secondary phase based on Zener mechanism. The best non-Ohmic properties with the nonlinear coefficient of 15.1 and the leakage current density of 95 µA/cm2 were observed in samples doped with 0.5% Tl2O3. Furthermore, the breakdown electric field of this sample was 532 V/mm. Further addition of Tl2O3 had no considerable effect on nonlinearity of samples, but it increased the breakdown electric field of samples through the reduction in grain size.

Keywords

Main Subjects

Oxides (Al2O3, SiO2, TiO2, B2O3, MgO, CaO, UO2, ...)

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Journal of Advanced Materials and Technologies

The Study of Tl2O3َ Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

References

References

Volume 9, Issue 1
June 2020
Pages 33-38

The Study of Tl2O3َ Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

References

References

Volume 9, Issue 1June 2020Pages 33-38

Volume 9, Issue 1
June 2020
Pages 33-38