Journal of Advanced Materials and Technologies

Journal of Advanced Materials and Technologies

Improving Electronic Parameters of Silicon Nanowires by Arsenic and Phosphor dopants

Authors
Maryam Moalaghi
Atieh Koohisaadi
Parisa Talebnia
Negin Manavizadeh
Mojgan Sadeghian Lemraski
K. N. Toosi University of Technology, Faculty of Electrical Engineering, Tehran, Iran.
10.30501/jamt.2636.70311
Abstract
In this paper, to improve the electronic parameters of silicon nanowires, the influence of As and P dopants are investigated. These electronic parameters include transmission spectra, mobility, mean free path and energy band diagram. To study the conduction mechanism and mobility of the Sinanowires, carrier transport along the long nanowires in presence of many defects (including dopant, vacancy, disorderly and surface roughness) has been investigated. In this paper, to simplify the calculations, short Si nanowires with small amount of defects are considered.
Therefore, short length silicon nanowires have been doped by As and P and the effects of the dopants have been analyzed. Simulation results demonstrate that, by increasing the energy, transmission spectra increases. It is shown that mobility decreasesin carrier concentration more than and for concentration less than this value, mobility is approximately constant.
Keywords
Si Nanowire
Transmission Spectra
Mean Free Path
Electron Mobility
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Journal of Advanced Materials and Technologies
Volume 4, Issue 4
Winter 2015
Pages 11-17

  • Receive Date 18 October 2015
  • Revise Date 09 January 2016
  • Accept Date 01 March 2016