Journal of Advanced Materials and Technologies

Journal of Advanced Materials and Technologies

Study of Electrical Property of Single Crystal InSb

Document Type : Original Reaearch Article

Authors
Shahin Atashbar Tehrani 1
Nader Morshedian 2
1 Assistant Professor, Department of Physics, Faculty of Nano and Bio Science and Technology, Persian Gulf University, P.O. Box: 75169 Bushehr, Iran.
2 Assistant Professor, Plasma and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, Tehran, Iran.
10.30501/jamt.2024.447841.1298
Abstract
The present study aims to determine the scattering mechanism in two types of n- and p-type InSb single crystal semiconductors. For this purpose, the changes in the Hall constant, electrical conductivity, dynamics coefficient in the temperature range of 77K to 360K, and Hall effect with an intensity of 7900 Gauss were simultaneously measured and compared with the theoretical results. Additionally, Debye temperature and dispersion mechanism were determined from the curve of changes in the mobility coefficient with respect to temperature. Further, the energy of the forbidden band and overlapping temperature were calculated from the curve of changes in the electrical conductivity, and the density of the charged particles as well as the type of charge carriers were determined from the changes in the Hall constant with respect to temperature. From the change curve of the dynamic’s coefficient with respect to temperature, the dispersion mechanism was defined. In this experiment, for the n-type sample, the scattering mechanism was carried out by the optical mode at high temperatures and by impurity at low temperatures. In the p-type sample, scattering was done by the acoustic mode. Finally, in both samples, the dynamics coefficient was theoretically calculated that showed good agreement with the experimental values.
Keywords
Scattering Mechanism
Hall Effect
Conductivity Electrical
Mobility

Subjects

  1. Alberga, G. E., Van Welzenis, R. G., & De Zeeuw, W. C. (1982). High electric-field hall effect measurements on n-type InSb at 77 K. Applied Physics A, 27, 107-120. https://doi.org/10.1007/BF00615813
  2. Baca, A. G., Ren, F., Zolper, J. C., Briggs, R. D., & Pearton, S. J. (1997). A survey of ohmic contacts to III-V compound semiconductors. Thin Solid Films, 308, 599-606. https://doi.org/10.1016/S0040-6090(97)00439-2
  3. Biernat, H., & Kriechbaum, M. (1976). Anomalous Hall effect of n‐InSb at high magnetic fields. Physica status solidi (b), 78(2), 653-6 https://doi.org/10.1002/pssb.2220780225
  4. Brooks, H. (1955). Theory of the electrical properties of germanium and silicon. In Advances in electronics and electron physics (Vol. 7, pp. 85-182). Academic Press. https://doi.org/10.1016/S0065-2539(08)60957-9
  5.  
  6. Erginsoy, C. (1950). Neutral impurity scattering in semiconductors. Physical Review, 79(6), 1013. https://doi.org/10.1103/PhysRev.79.1013
  7. Howarth, D. J., & Sondheimer, E. H. (1953). The theory of electronic conduction in polar semi-conductors. Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 219(1136), 53-74. http://dx.doi.org/10.1098/rspa.1953.0130
  8. Hrostowski, H. J., Morin, F. J., Geballe, T. H., & Wheatley, G. H. (1955). Hall effect and conductivity of InSb. Physical Review, 100(6), 1672. https://doi.org/10.1103/PhysRev.100.1672
  9. InSb Basic parameter in 300K https://www.ioffe.ru/SVA/NSM/Semicond/InSb/basic.html
  10. Kobaidze, R., Khutsishvili, E., & Kekelidze, N. (2018). Numerical computation of charge carriers optical phonon scattering mobility in III–V semiconductor compounds. Transactions of A. Razmadze Mathematical Institute, 172(3), 404-408. https://doi.org/10.1016/j.trmi.2018.06.002
  11. Molodyan, I. P., Nasledov, D. N., Radautsan, S. I., & Sidorov, V. G. (1966). The effective mass of electrons in (InSb) x·(InTe) 1− x crystals. Physica Status Solid (b), 18(2), 677-682. https://doi.org/10.1002/pssb.19660180219
  12. Morisaki, H. (1970). Measurement of Hall effect in InSb by self-magnetic field. Solid-State Electronics, 13(7), 911-918. https://doi.org/10.1016/0038-1101(70)90087-0
  13. Peard, N., Callahan, D., Perkinson, J. C., Du, Q., Patel, N. S., Fakhrul, T., ... & Wang, C. Y. (2021). Magneto-optical properties of InSb for infrared spectral filtering. Journal of Applied Physics, 129(20). https://doi.org/10.1063/5.0048836
  14. Rowe, D. M., & Bunce, R. W. (1971). Apparatus for measuring resistivity and Hall coefficient of heavily doped semiconductors at high temperatures. Journal of Physics E: Scientific Instruments, 4(11), 902. http://doi.org/10.1088/0022-3735/4/11/027
  15. Shockley, W., & Bardeen, J. (1950). Energy bands and mobilities in monatomic semiconductors. Physical Review, 77(3), 407. https://doi.org/10.1103/PhysRev.77.407
  16. Sladek, R. J. (1957). Effective masses of electrons in indium arsenide and indium antimonide. Physical Review, 105(2), 460. https://doi.org/10.1103/PhysRev.105.460
  17. Slutsky, L. J., & Garland, C. W. (1959). Elastic constants of indium antimonide from 4.2 K to 300 K. Physical Review, 113(1), 167. https://doi.org/10.1103/PhysRev.113.167
  18. Sugiyama, Y., & Kataoka, S. (1985). S/N study of micro-Hall sensors made of single crystal InSb and GaAs. Sensors and Actuators, 8(1), 29-38. https://doi.org/10.1016/0250-6874(85)80022-6
  19. Tanenbaum, M., & Maita, J. P. (1953). Hall effect and conductivity of InSb single crystals. Physical Review, 91(4), 1009. https://doi.org/10.1103/PhysRev.91.1009
  20. Tukioka, K. T. K. (1991). The determination of the deformation potential constant of the conduction band in InSb by the electron mobility in the intrinsic range. Japanese journal of applied physics, 30(2R), 212. https://iopscience.iop.org/issue/1347-4065/30/2R
  21. Wang, Y., Zhang, D. H., & Liu, W. (2008). The temperature dependence of electrical properties in N-doped InSb. In 2008 IEEE PhotonicsGlobal@ Singapore (pp. 1-3).
  22. https://doi.org/10.1109/IPGC.2008.4781374
  23. Wang, Z., Sun, F., Liu, J., Tian, Y., Zhang, Z., Zhang, Y., ... & Duan, L. (2020). Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure. Physical Chemistry Chemical Physics, 22(36), 20712-20720. https://doi.org/10.1039/D0CP02721A
Journal of Advanced Materials and Technologies
Volume 13, Issue 2
Summer 2024
Pages 53-62

  • Receive Date 10 March 2024
  • Revise Date 18 July 2024
  • Accept Date 11 September 2024