Study on the Optical Properties of WS2 Thin Films Annealed in Various Atmospheres Including Ar, Ar/H2, NH3/H2O, and O2

Gholizadeh, Farshad; Reyhani, Ali; Mortazavi, Seyedeh Zahra; Parvin, Parviz

doi:10.30501/jamt.2023.364505.1249

Study on the Optical Properties of WS2 Thin Films Annealed in Various Atmospheres Including Ar, Ar/H2, NH3/H2O, and O2

Document Type : Original Reaearch Article

Authors

Farshad Gholizadeh ¹

Ali Reyhani ²

Seyedeh Zahra Mortazavi ²

Parviz Parvin ³

¹ M. Sc Student, Department of Physics, Faculty of Science, Imam Khomeini International University, Qazvin, Qazvin, Iran

² Associate Professor, Department of Physics, Faculty of Science, Imam Khomeini International University, Qazvin, Qazvin, Iran

³ Professor, Department of Applied Physics, Faculty of Physics and Energy Engineering, Amirkabir University of Technology, Tehran, Tehran, Iran

10.30501/jamt.2023.364505.1249

Abstract

In this study, tungsten disulfide nanostructures are synthesized on the Si/SiO₂ substrates by thermal chemical vapor deposition in a three-zone furnace. For this purpose, sulfur and tungsten oxide powders are first placed under argon gas in the first and third regions of the furnace at 220 and 1100 °C, respectively. A scanning electron microscope is then used to evaluate the morphology of the grown layers. The images confirm the growth of WS₂ hexagonal flakes. The samples are then placed in a ceramic plant in the center of a single-zone furnace for re-annealing. The grown layers are reheated under different gases of Argon, Argon/Hydrogen, Oxygen, and Ammonia/Water at 450 °C for 30 minutes. To evaluate the annealing effect, X-ray diffraction, Raman spectroscopy, and Ultraviolet-Visible spectroscopy are employed. The results confirmed the effect of the Argon/Hydrogen atmosphere on the improvement in the optical and crystalline properties of the WS₂ synthesized layers.

Keywords

Tungsten Sulfide

Thermal Chemical Vapor Deposition

Optical Properties

Heat Treatment

Subjects

Materials Properties (Physical, Mechanical, Optical, Electrical, Thermal, Chemical, Structural, Acoustical, Environmental, Radiological, Magnetic, Atomic, Thermodynamic, and Manufacturing)

Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., Kis, A., "2D transition metal dichalcogenides", Nature Reviews Materials, Vol. 2, No. 8, (2017), 17033. https://doi.org/10.1038/natrevmats.2017.33
Dong, R., Kuljanishvili, I., "Review article: Progress in fabrication of transition metal dichalcogenides heterostructure systems", Journal of Vacuum Science & Technology B, Vol. 35, No. 3, (2017), 030803. https://doi.org/10.1116/1.4982736
Liu, B., Abbas, A., Zhou, C., "Two-Dimensional semiconductors: From materials preparation to electronic applications" Advanced Electronic Materials, Vol. 3, No. 7, (2017), 1700045. https://doi.org/10.1002/aelm.201700045
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., Xu, X., "Valleytronics in 2d materials", Nature Reviews Materials, Vol. 1, No. 1, (2016), 16055. https://doi.org/10.1038/natrevmats.2016.55
Kavintheran, T., Reduan, S. A., Tiu, Z. C., Ahmad, H., "Application of two-dimensional materials in fiber laser systems", Nano-Optics, Elsevier, (2020), 227-264. https://doi.org/10.1016/b978-0-12-818392-2.00009-3
Timothy, C., Berkelbach, M., Hybertsen, S., David, R., Reichman, R., "Theory of neutral and charg excitons in monolayer transition metal dichalcogenides", Physical Review B, Vol. 88, No. 4, (2013), 045318. https://doi.org/10.1103/physrevb.88.045318
Krasnok, A., Lepeshov, S., Al´u, A., "Nanophotonics with 2d transition metal dichalcogenides", Optics Express, Vol. 26, No. 12, (2018), 15972-15994. https://doi.org/10.1364/oe.26.015972
Schneider, C., Glazov, M. M., Korn, T., H¨ofling, S., Urbaszek, B., "Two-Dimensional semiconductors in the regime of strong light-matter coupling", Nature Communications, Vol. 9, No. 1, (2018), 2695. https://doi.org/10.1038/s41467-018-04866-6
Zhang, W., Huang, H., Zhang, W., Li, Y., "Two-Dimensional semiconductors with possible high room temperature mobility", Nano Research, Vol. 7, (2014), 1731-1737. https://doi.org/10.1007/s12274-014-0532-x
Ye, Z., Cao, T., O’brien, K., Zhu, H., Yin, X., Wang, Y., Louie, S. G., Zhang, X., "Probing excitonic dark states in single-layer tungsten disulphide", Nature, Vol. 513, (2014), 214-218. https://doi.org/10.1038/nature13734
Zhu, Z. U., Cheng, Y. C., Schwingenschlögl, U., "Vacancy induced half-metallicity in half-Heusler semiconductors", Physical Review, B, Vol. 84, (2011), 113201. https://doi.org/10.1103/physrevb.84.113201
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P. H., Eda, G., "Evolution of electronic structure in atomically thin sheets of WS₂ and WSe₂", ACS Nano, Vol. 7, (2013), 791. https://doi.org/10.1021/nn305275h
Kumar, J., Kuroda, M. A., Bellus, M. Z., Han, S. J., Chiu, H. Y., "Full-range electrical characteristics of WS₂ transistors", Phys. Lett., Vol. 106, (2015), 123508. https://doi.org/10.1063/1.4916403
Fan, Y., Zhou, Y., Wang, X., Tan, H., Rong, Y., Warner, J. H., "Photoinduced schottky barrier lowering in 2D monolayer WS₂ photodetectors", Opt. Mater., Vol. 4, No. 10, 1573-1581. https://doi.org/10.1002/adom.201600221
Sheng, Y., Chen, T., Lu, Y., Chang, R. J., Sinha, S., Warner, J. H., "High-performance WS₂ monolayer light-emitting tunneling devices using 2d materials grown by chemical vapor deposition", ACS Nano, Vol. 13, No. 4, 4530-4537. https://doi.org/10.1021/acsnano.9b00211
Min, W., Xiao, Y., Zeng, Y., Zhou, Y., Zeng, X., Zhang, L., Liao, W., "Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics", InfoMat, Vol. 3, No. 4, (2021), 362-396. https://doi.org/10.1002/inf2.12161
Noori, A., Eshraghi, M. J., SadatKazemi, A., "Effect of temperature on low pressure chemical vapor deposition of graphene", Advanced Ceramics Progress, Vol. 8, No. 1, (2022), 36-43. https://doi.org/10.30501/acp.2022.343786.1090
Raadi, Z., Rahimi, A. H., Ghanbari, H., Sarpoolaky, H., "2D materials; Introduction, classifications, properties, and applications", Journal of Advanced Materials and Technologies (JAMT), Vol. 10, No. 4, (2022), 37-75. https://doi.org/10.30501/jamt.2021.260205.1145