Journal of Advanced Materials and Technologies

Journal of Advanced Materials and Technologies

Comparison of Optical and Electrical Properties of TeO2 Nanostructure Thin Films Before and After Gamma Radiation

Document Type : Original Reaearch Article

Author
Tavakkol Tohidi
Assistant Professor, Radiation Application Research School, Nuclear Science and Technology Research Institute (NSTRI), Northwest Research Complex, Bonab, East Azerbaijan, Iran
10.30501/jamt.2021.254430.1137
Abstract
Tellurium dioxide (TeO2) is an important semiconductor, which it has high acousto-optic figure of merit, chemical stability and mechanical durability and both in its crystalline and amorphous forms, making it suitable for theoretical studies and technological applications such as optical devices, γ-ray detectors, and gas sensors. In this work, the TeO2 thin film with three different thicknesses was prepared by vacuum thermal evaporation method. The effect of gamma irradiation in the range of 10-40 Gy and also the effect of thermal annealing on properties of TeO2 thin films were investigated. Scanning Electron Microscopy (SEM) results showed the formation of the film with smooth surface. X-Ray Diffraction (XRD) analysis were revealed that the as-deposited films were amorphous but after annealing at 400 °C, the crystalline phase of the samples occurred. The optical absorbance after annealing and gamma radiation was increased but the band gap  decreased. The electrical current of samples was increased with increasing of films thickness, gamma dose and also after annealing.
 
Keywords
TeO2
Thin Film
Gamma Irradiation
Optical Properties
Electrical Properties

Subjects

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Journal of Advanced Materials and Technologies
Volume 10, Issue 2
Summer 2021
Pages 71-82

  • Receive Date 04 November 2020
  • Revise Date 31 December 2020
  • Accept Date 02 October 2021